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R1EX24128BSAS0A/R1EX24128BTAS0A
Absolute Maximum Ratings
Parameter
Supply voltage relative to V SS
Input voltage relative to V SS
Operating temperature range * 1
Storage temperature range
Symbol
V CC
Vin
Topr
Tstg
Value
? 0.6 to +7.0
? 0.3 to V CC +0.3
? 40 to +85
? 55 to +125
Unit
V
V
° C
° C
Notes: 1. Including electrical characteristics and data retention.
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Operating temperature
Symbol
V CC
V SS
V IH
V IL
Topr
Min
1.8
0
V CC × 0.7
? 0.3
? 40
Typ
?
0
?
?
?
Max
5.5
0
V CC + 0.3
V CC × 0.3
+85
Unit
V
V
V
V
° C
DC Characteristics
(Ta = ? 40 to +85 ° C, V CC = 1.8 V to 5.5 V)
Parameter
Input leakage current
Output leakage current
Standby V CC current
Read V CC current
Write V CC current
Output low voltage
Symbol
I LI
I LO
I SB
I CC1
I CC2
V OL2
V OL1
Min
?
?
?
?
?
?
?
Typ
?
?
1.0
?
?
?
?
Max
2.0
2.0
2.0
1.0
3.0
0.4
0.2
Unit
μ A
μ A
μ A
mA
mA
V
V
Test conditions
V CC = 5.5 V, Vin = 0 to 5.5 V
V CC = 5.5 V, Vout = 0 to 5.5 V
Vin = V SS or V CC
V CC = 5.5 V, Read at 400 kHz
V CC = 5.5 V, Write at 400 kHz
V CC = 2.7 to 5.5 V, I OL = 3.0 mA
V CC = 1.8 to 2.7 V, I OL = 1.5 mA
Capacitance
(Ta = +25 ° C, f = 1 MHz)
Parameter
Input capacitance (A0 to A2, SCL, WP)
Output capacitance (SDA)
Symbol
Cin * 1
C I/O * 1
Min
?
?
Typ
?
?
Max
6.0
6.0
Unit
pF
pF
Test conditions
Vin = 0 V
Vout = 0 V
Note:
1. Not 100 % tested.
Memory cell characteristics
(V CC = 1.8 V to 5.5 V)
Ta=25 ° C
Ta=85 ° C
Notes
Endurance
Data retention
1,000k Cycles min.
100 Years min.
100k Cycles min
10 Years min.
1
1
Notes: 1. Not 100 % tested
R10DS0006EJ0100 Rev.1.00
Aug. 04, 2010
Page 3 of 16
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